? 2006 ixys all rights reserved v ces = 1700 v i c25 = 12 a v ce(sat) = 4.0 v t fi(typ) = 290 ns ixgh 6n170 ixgt 6n170 c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixgh) features z international standard packages jedec to-268 and jedec to-247 ad z high current handling capability z mos gate turn-on - drive simplicity z rugged npt structure z molding epoxies meet ul 94 v-0 flammability classification applications z capacitor discharge & pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies advantages z high power density z suitable for surface mounting z easy to mount with 1 screw, (isolated mounting screw hole) ds98989b(09/06) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces 10 a v ge = 0 v t j = 125 c 100 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 3.0 4.0 v t j = 125 c 4.0 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c12a i c90 t c = 90 c6a i cm t c = 25 c, 1 ms 24 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 i cm = 12 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c75w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering smd devices for 10 s 260 c m d mounting torque (m3) to-247 1.13/10nm/lb.in. weight to-247 ad 6 g to-268 4 g to-268 (ixgt) g e high voltage igbt c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 6n170 ixgt 6n170 dim. mi llimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 ad outline remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 3 4 .5 s pulse test, t 300 s, duty cycle 2 % i c(on) v ge = 15v, v ce = 10v 28 a c ies 330 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 23 pf c res 6pf q g 20 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 3.6 nc q gc 8nc t d(on) 40 ns t ri 36 ns t d(off) 250 500 ns t fi 290 500 ns e off 1.5 2.5 mj t d(on) 45 ns t ri 40 ns e on 0.5 mj t d(off) 300 ns t fi 300 ns e off 2.0 mj r thjc 1.65 k/w r thck (to-247) 0.25 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 33 inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 33 min recommended footprint to-268 outline dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,063,975b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 7,071,537 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537
? 2006 ixys all rights reserved ixgh 6n170 ixgt 6n170 fig. 1. output characteristics @ 25oc 0 1 2 3 4 5 6 7 8 9 10 11 12 0123456 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. exteded output characteristics @ 25oc 0 3 6 9 12 15 18 21 24 27 30 0 2 4 6 8 10 12 14 16 18 v ce - volts i c - amperes v ge = 15v 7v 11v 9v 13v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 012345678 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 12a i c = 6a i c = 3a fig. 5. input admittance 0 1 2 3 4 5 6 7 8 9 10 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc fig. 6. transconductance 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 012345678910 i c - amperes g f s - siemens t j = -40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 6n170 ixgt 6n170 fig. 7. gate charge 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16 18 20 q g - nanocoulombs v ge - volts v ce = 850v i c = 6a i g = 10 ma fig. 8. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 10. maximum transient thermal resistance 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w fig. 9. reverse-bias safe operating area 0 1 2 3 4 5 6 7 8 9 10 11 12 13 100 300 500 700 900 1100 1300 1500 1700 v ce - volts i c - amperes t j = 125oc r g = 33 dv / dt < 10v / ns
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